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10-FZ06NBA030SA-P914L33 preliminary datasheet flowboost0 600v/30a symmetric boost clip-in pcb mounting low inductance layout ups 10-FZ06NBA030SA-P914L33 tj=25c, unless otherwise specified parameter symbol value unit input boost igbt collector-emitter break down voltage v ce 600 v t h =80c 31 t c =80c 41 t h =80c 60 t c =80c 91 gate-emitter peak voltage v ge 20 v t sc t j 150c 6 s v cc v ge =15v 360 v maximum junction temperature t j max 175 c input boost inverse diode t h =80c 19 t c =80c 25 t h =80c 35 t c =80c 53 t j =t j max t j =t j max t j =t j max t p limited by t j max features t j =t j max i cpulse p tot flow0 housing target applications schematic types maximum ratings condition power dissipation per diode t j =25c power dissipation per igbt maximum junction temperature t j max i frm repetitive peak forward current dc forward current i f c 175 a a v a 600 30 90 repetitive peak collector current i c p tot w a w t p limited by t j max v rrm peak repetitive reverse voltage short circuit ratings dc collector current 1 revisi on: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition input boost fwd t h =80c 30 t c =80c 39 t h =80c 48 t c =80c 73 thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm t j =t j max t j =25c t p limited by t j max i f repetitive peak forward current v rrm peak repetitive reverse voltage dc forward current i frm power dissipation maximum junction temperature t j max p tot t j =t j max w v a c a c storage temperature t stg -40?+125 c -40?+(tjmax - 25) clearance insulation voltage creepage distance t op operation temperature under switching condition 600 60 175 t c =100c 2 revi sion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 5 5,8 6,5 t j =150c t j =25c 1 1,58 2,05 t j =150c 1,81 t j =25c 0,03 t j =150c t j =25c 350 t j =150c t j =25c 103 t j =150c 103 t j =25c 14 t j =150c 19 t j =25c 152 t j =150c 173 t j =25c 85 t j =150c 103 t j =25c 0,40 t j =150c 0,54 t j =25c 0,68 t j =150c 0,92 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,58 k/w t j =25c 1 1,79 2,05 tj=125c 1,67 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 2,69 k/w tj=25c 1 1,71 2,05 t j =125c 1,64 t j =25c 30 t j =125c t j =25c 33 t j =125c 39 t j =25c 111 t j =125c 178 t j =25c 1,30 t j =125c 2,57 t j =25c 0,27 t j =125c 0,58 di ( rec ) max t j =25c 3664 /d t t j =125c 1549 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,97 k/w b tj=25c vincotech ntc reference 3996 k 3950 k b-value b (25/100) tol. 3% tj=25c tj=25c b-value b (25/50) tol. 3% r 300 25 10 300 25 % 22000 ? tj=25c 2 +5 -5 tj=25c 0,00043 30 30 30 30 rgon=16 ? 15 600 f=1mhz 0 20 15 rgon=16 ? rgoff=16 ? v ce(sat) v ce =v ge turn-off energy loss per pulse r gint turn-off delay time e on t d(off) turn-on energy loss per pulse fall time turn-on delay time rise time integrated gate resistor c rss v f q gate v f f=1mhz c ies t d(on) e off t f q rr i ces c oss i rrm i rm e rec forward voltage diode forward voltage input capacitance output capacitance reverse transfer capacitance input boost inverse diode gate charge t rr input boost fwd value conditions v ge(th) i ges gate emitter threshold voltage t r collector-emitter saturation voltage input boost igbt gate-emitter leakage current collector-emitter cut-off characteristic values tj=25c 0 v mws pf 0 0 600 15 reverse leakage current peak recovery current peak rate of fall of recovery current reverse recovery charge reverse recovery time reverse recovered energy mw/k p mw 200 rated resistance power dissipation constant deviation of r100 power dissipation r/r r100=1486 ? 15 thermistor 1630 50 167 108 none a ns v v nc v tj=25c tj=25c tj=100c a/ s mws c a na ? ns ma 3 revisio n: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 1 boost igbt figure 2 boost igbt typical output characteristics typical output characteristics i d = f(v ds ) i d = f(v ds ) at at t p = 250 s t p = 250 s t j = 25 c t j = 150 c v ds from 7 v to 17 v in steps of 1 v v ds from 7 v to 17 v in steps of 1 v figure 3 boost igbt figure 4 boost fwd typical transfer characteristics typical diode forward current as i d = f(v ds ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ds = 10 v input boost 0 15 30 45 60 75 90 00,511,522,533,5 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 100 120 012345 v ce (v) i c (a) 0 20 40 60 80 100 120 012345 v ce (v) i c (a) 0 5 10 15 20 25 30 024681012 v gs (v) i d (a) t j = 25c t j = t jmax -25c 4 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 5 boost igbt figure 6 boost igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i d ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ds = 300 v v ds = 300 v v gs = 15 v v gs = 15 v r gon = 16 ? i d = 30 a r goff = 16 ? figure 7 boost igbt figure 8 boost igbt typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ds = 300 v v ds = 300 v v gs = 15 v v gs = 15 v r gon = 16 ? i d = 30 a r goff = 16 ? input boost e rec high t e rec low t 0 0,2 0,4 0,6 0,8 1 0 102030405060 i c (a) e (mws) e rec high t e rec low t 0 0,2 0,4 0,6 0,8 1 0 1530456075 r g ( ) e (mws) e off high t e on high t e on low t e off low t 0 0,3 0,6 0,9 1,2 1,5 0 1 02 03 04 05 06 0 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 0,3 0,6 0,9 1,2 1,5 0 1 53 04 56 07 5 r g ( ) e (mws) 5 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 9 boost igbt figure 10 boost igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i d ) t = f(r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ds = 300 v v ds = 300 v v gs = 15 v v gs = 15 v r gon = 16 ? i c = 30 a r goff = 16 ? figure 11 boost fwd figure 12 boost fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of mosfet turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ds = 300 v v r = 300 v v gs = 15 v i f = 30 a r gon = 16 ? v gs = 15 v input boost t doff t f t don t r 0,001 0,01 0,1 1 0 1 02 03 04 05 06 0 i d (a) t ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 1 53 04 56 07 5 r g ( ) t ( s) t rr high t t rr low t 0 0,1 0,2 0,3 0,4 0,5 0,6 0 1 53 04 56 07 5 r gon ( ) t rr ( s) t rr high t t rr low t 0 0,05 0,1 0,15 0,2 0,25 0,3 0 1 02 03 04 05 06 0 i c (a) t rr ( s) 6 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 13 boost fwd figure 14 boost fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of mosfet turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/150 c tj = 25/150 c v ds = 300 v v r =300 v v gs = 15 v i f =30 a r gon = 16 ? v gs =15 v figure 15 boost fwd figure 16 boost fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ds = 300 v v r = 300 v v gs = 15 v i f = 30 a r gon = 16 ? v gs = 15 v input boost i rrm high t i rrm low t 0 20 40 60 80 100 0 1530456075 r gon ( ) irrm (a) q rr high t q rr low t 0 0,8 1,6 2,4 3,2 4 0 1530456075 r gon ( ) q rr ( c) i rrm high t i rrm low t 0 10 20 30 40 50 0 102030405060 i c (a) irrm (a) q rr high t q rr low t 0 1 2 3 4 5 0 102030405060 i c (a) q rr ( c) 7 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 17 boost fwd figure 18 boost fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r =300 v v ge = 15 v i f =30 a r gon = 16 ? v gs =15 v figure 19 boost igbt figure 20 boost fwd mosfet transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 1,58 k/w igbt thermal model values r thjh = 1,97 k/w fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,034 7,75e+00 0,03 9,53e+00 0,168 9,36e-01 0,17 8,69e-01 0,630 1,45e-01 0,70 1,31e-01 0,427 2,94e-02 0,54 2,74e-02 0,199 5,22e-03 0,33 4,55e-03 0,122 3,91e-04 0,20 3,66e-04 input boost 0 3000 6000 9000 12000 15000 0 1530456075 r gon ( ) di rec / dt (a/ s) t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 1000 2000 3000 4000 5000 6000 0 1 02 03 04 05 06 0 i c (a) di rec / dt (a/ s) di 0 /dt di rec /dt di 0 /dt di rec /dt 8 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 21 boost igbt figure 22 boost igbt power dissipation as a collector/drain current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 oc t j = 175 oc v gs = 15 v figure 23 boost fwd figure 24 boost fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 oc t j = 175 oc input boost 0 25 50 75 100 125 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 th ( o c) i c (a) 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i f (a) 9 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 25 boos t igbt figure 26 boost igbt safe operating area as a function gate voltage vs gate charge of drain-source voltage i d = f(v ds )v gs = f(qg) at at d = single pulse i d = 30 a t h = 80 oc v gs = 15 v t j =t jmax oc input boost v ds (v) i d (a) 10 3 10 0 10 0 10 1 10 2 100us 1ms 10ms 100m s dc 10 2 10 1 10us 10 3 0 2 4 6 8 10 12 14 16 18 0 20 40 60 80 100 120 140 160 180 200 220 qg (nc) u gs (v) 120v 480v 10 revision: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 1 boost inv. diode figure 2 boost inv. diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f )z thjh = f(t p ) at at t p = 250 sd = t p / t r thjh = 2,69 k/w figure 3 boost inv. diode figure 4 boost inv. diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 oc t j = 175 oc boost inv. diode 0 8 16 24 32 40 00,511,522,53 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 10 20 30 40 50 60 70 0 50 100 150 200 t h ( o c) p tot (w) 0 5 10 15 20 25 30 0 50 100 150 200 t h ( o c) i f (a) 11 revision: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 1 thermistor figure 2 thermistor typical ntc characteristic typical ntc resistance values as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 24000 25 50 75 100 125 t (c) r/ ? [] ?= ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? 25 100 / 25 11 25 )( tt b ertr 12 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet t j 175 c r g on 16 ? r goff 16 ? figure 1 boost igbt figure 2 boost igbt turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 30 a i c (100%) = 30 a t doff = 0,17 s t don = 0,10 s t eoff = 0,46 s t eon = 0,23 s figure 3 boost igbt figure 4 boost igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 30 a i c (100%) = 30 a t f = 0,10 s t r = 0,02 s switching definitions boost igbt general conditions = = = i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 -0,3 -0,15 0 0,15 0,3 0,45 0,6 time (us) % t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 2,9 3 3,1 3,2 3,3 3,4 time(us) % i c v ce t eon v ge fitted i c 10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 0 0,1 0,2 0,3 0,4 time (us) % v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3 3,05 3,1 3,15 3,2 3,25 time(us) % t r v ce i c 13 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 5 boost igbt figure 6 boost igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 9,06 kw p on (100%) = 9,06 kw e off (100%) = 0,92 mj e on (100%) = 0,54 mj t eoff = 0,46 s t eon = 0,23 s figure 7 boost igbt figure 8 boost fwd gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v geoff = -15 v v d (100%) = 300 v v geon = 15 v i d (100%) = 30 a v c (100%) = 300 v i rrm (100%) = -39 a i c (100%) = 30 a t rr = 0,18 s q g = 270,23 nc switching definitions boost igbt i c 1% v ge90% -20 0 20 40 60 80 100 120 -0,2 0 0,2 0,4 0,6 time (us) % p o f f e off t eoff v ce 3% v ge 10% -30 0 30 60 90 120 150 180 2,9 3 3,1 3,2 3,3 3,4 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -50 0 50 100 150 200 250 300 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -160 -120 -80 -40 0 40 80 120 3 3,1 3,2 3,3 3,4 3,5 time(us) % i d v d fitted 14 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet figure 9 boost fwd figure 10 boost fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr )( t erec = integrating time for e rec ) i d (100%) = 30 a p rec (100%) = 9,06 kw q rr (100%) = 2,57 c e rec (100%) = 0,58 mj t qrr = 0,42 s t erec = 0,42 s switching definitions boost igbt t qrr -150 -100 -50 0 50 100 150 3 3,15 3,3 3,45 3,6 3,75 time(us) % i d q r r -20 10 40 70 100 130 3 3,15 3,3 3,45 3,6 3,75 time(us) % p rec e rec t erec 15 revis ion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet version ordering code in datamatrix as in packaging barcode as standard in flow0 12mm housing 10-FZ06NBA030SA-P914L33 p914l33 p914l33 outline pinout ordering code & marking ordering code and marking - outline - pinout 16 revi sion: 2 copyright by vincotech
10-FZ06NBA030SA-P914L33 preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the applic ation or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) su pport or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specificat ions may change in any manner without notice. the data contained is exclusively intended for technically trained staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. 17 revisi on: 2 copyright by vincotech

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